SENSITRON is certified to MIL-PRF-38534, Class K, for Hybrid Microelectronics, MIL-PRF-19500 for JANTX, JANTXV and JANS discrete diodes, and registered to AS9100.
White Paper: High Strength SMD Package
The High Strength SMD Package from Sensitron offers enhanced temperature/power cycling capability over the standard SMD rugged low profile package. This white paper will provide information about our new patented technology.
Your Power Solutions Provider. Contact Sensitron to design the optimal solution to power your application today.
Ultralight Rugged SiC Power Bridge Modules
Available up to 1200V, 150A for high-reliability applications requiring high power in a lightweight and small footprint package.
Lightweight SiC & IGBT Power Modules
SuperClamp TVS
Protection for HV Relay Contacts
The SHV Series of high voltage bridge stacks are in a lightweight, low stress package. Available up to 15kV with low thermal resistance and insulation resistance to 10GΩ at 20kV. SiC versions are currently in development.
more »March 2024
Sensitron has designed a non-hermetic 40V, 30A radiation tolerant DC load switch module with 100mV/A output current telemetry. The baseless power chip on board package design features low inductance, superior thermal performance, and low conduction loss. This device is a completely self-contained power module that can be used in various power applications. Contact us for samples today!
more »December 2023
Sensitron has designed a silicon carbide rectifier diode that is a drop-in replacement for JANTX1N6631 and outperforms the MIL-PRF-19500/590 series. This 2 Amp 1200 Volt SiC rectifier diode is screened to JANTX level. The thru hole package of this device is compatible with an A body rectifier PCB layout and features hot solder dipped leads.
more »November 2023
Sensitron’s latest MIL-STD-1275 TVS modules include a surface mount version for use in military ground vehicle load dumps, “jump starting”, and lightning strike protection applications.
more »September 2023
Sensitron has recently developed a GaN half bridge with an integrated gate drive using the latest generation of GaN FETs. The ultra small, lightweight package (1.10" x 0.70" x 0.14") uses power flip chip on board with topside cooling which allows for optimal thermal performance and high power density.
more »July 2023
Designed using the latest generation of SiC FETs, Sensitron has developed the industry’s first SiC power module with an integrated gate drive. This conduction cooled low weight (1.1 oz) and low profile (0.37 in) module simplifies implementation in high speed power switching environments.
more »May 2023
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